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We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects and...
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simulation module to study electron transport in nanowire structures. The 1DMSMC simulation module is integrated into the GSS TCAD simulator GARAND coupling a MC electron trajectory simulation with a 3D Poisson-2D Schrödinger solver, and accounting for the modified acoustic phonon, optical phonon, and surface...
We apply a unique three-dimensional (3D) physics-based atomistic simulator to study silicon-rich (SiOx, x<2) resistive switching nonvolatile memory (RRAM) devices. We couple self-consistently a simulation of ion and electron transport to the ‘atomistic’ simulator GARAND and a selfheating model to explore the switching processes in these structures. The simulation model is more advanced than other...
We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been successfully demonstrated experimentally at ambient conditions [1]. The simulator couples self-consistently a simulation of oxygen ion and electron transport...
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