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The blocking effect of Mn diffusion in NiFe/(Mn,Cr)/FeMn/(Mn,Cr)/NiFe multilayer was investigated. The exchange biasing field (H ex ) was maintained up to the inserted Mn thickness of 1.5nm, while the H ex of the inserted Cr sample disappeared at 0.5nm. To protect the interdiffusion of Mn atoms between FeMn and NiFe layers during the annealing process, an ultrathin Cr layer...
Surface-channel PMOSFET's have been realized using a dopant-drive-out technique with WSi/sub x/ polycide gate. The advantages of this technique include (1) excellent thermal stability, (2) superior electrical device characteristics suitable for deep sub-half micron technology, (3) 10 Omega / Square Operator sheet resistance for a thin gate stack (<or=200 nm), (4) less severe gate topography, and...
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