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Lattice dynamics, molecular vibrations as well as defects and traps in ultra-thin Hf-based gate dielectrics on Si and strained-SiGe layers have been studied using inelastic tunneling spectroscopy (IETS). Molecular vibrations, phonons, defects and trap-features are identified from IETS of the samples for comparing and analyzing different interface qualities.
Low-frequency noise characteristics in forward-biased silicon iron disilicide solar cells have been studied for reliability analysis. Noise spectral density as a function of frequency is compared for both the p-β-FeSi2 (Al) and p-β-FeSi2 solar cells. Burst noise and its bias dependency have been studied for both the devices.
Phonon spectra and lattice dynamics of silicon and other molecular species are studied in detail using inelastic tunneling spectroscopy (IETS) of p-type Al/SiO2/Si tri-gate FinFETs. Phonon and vibration modes are compared for FinFETs on (100) and (110) silicon substrates. The shift in phonon frequencies depending on the direction of current flow, i.e. substrate orientation, has been demonstrated....
Random Telegraph Noise (RTN) characteristics of p-type silicon nanowire FinFET have been studied. It is shown that from multilevel RTN noise characteristics the presence of multiple traps inside the gate oxide may be predicted.
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