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A systematic growth optimization of Cu2ZnSn(S,Se)4 (CZTSSe) thin films by dual ion beam sputtering system from a single CZTSSe target is presented. It is observed that the ratio of Cu/(Zn+Sn) varies from 0.86 to 1.5 and that of (S+Se)/metal varies between 0.62 and 0.97 when substrate temperature (Tsub) is increased from 100 to 500°C. The crystal structure of all CZTSSe films are identified to be preferentially...
A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of −0.045 and −0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that...
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