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A dual BN/AlN capping layer has been developed for annealing implanted SiC up to a temperature of at least 1700 o C. The AlN is used as a protective layer on SiC because it is chemically inert on the material and can be removed selectively with a warm KOH etch, while the BN layer prevents the AlN from evaporating at temperatures above 1600 o C. Prior to etching off the AlN film, the...