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We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability...
More than 400 nm spectrum width LED was obtained in the InAs QDs array waveguide using height changed QDs during double-cap procedure and strain controlled buffer in 3 layered QDs.
Photoluminescence (PL) properties of blue InGaN quantum-well light-emitting diodes have been investigated at 20 K as a function of excitation power and reverse bias voltage (external field). PL intensity reduction of the main blue emission band is observed by increasing the reverse field. The photoexcitation power dependence suggests that the hole escape process plays an important role for the determination...
Nitrided InAs quantum dots (QDs) have been shown to suppress In-segregation in QDs and achieve emission at 1.3 mum. Effects of strain on structural and optical properties of QDs have been demonstrated through transmission electron microscope and photoluminescence analyses
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