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We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability...
More than 400 nm spectrum width LED was obtained in the InAs QDs array waveguide using height changed QDs during double-cap procedure and strain controlled buffer in 3 layered QDs.
Nitrided InAs quantum dots (QDs) have been shown to suppress In-segregation in QDs and achieve emission at 1.3 mum. Effects of strain on structural and optical properties of QDs have been demonstrated through transmission electron microscope and photoluminescence analyses
We have successfully developed a novel AlGaN/GaN FET with dual field-modulating-plates (FPs). The breakdown voltage is enhanced from 125 to 250 V by adding the second FP to the conventional FP structure. Benefiting from the first FP, no current collapse is observed simultaneously. Since the second FP effectively reduces feedback capacitance, this device provides a 3-dB higher gain along with increased...
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