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In order to provide increasing data rates demanded by the consumer market, the 4G RF cellular front-end is becoming increasingly complex with numerous transmit and receive bands, the possibility of multiple antennas and new architectures which involves Uplink and Downlink carrier aggregation. Such new architectures present extreme challenges for conventional fixed band systems composed of PAs, switches...
A single-pole double-throw novel switch device in 0.18 ??m SOI complementary metal-oxide semiconductor (CMOS) process is developed for 0.9 Ghz wireless GSM systems. The layout of the device is optimized keeping in mind the parameters of interest for the RF switch. A subcircuit model, with the standard surface potential (PSP) model as the intrinsic FET model along with the parasitic elements is built...
Results for cellular antenna switches using high resistivity silicon-on-insulator (SOI) CMOS technology are presented. The performance of SOI RF switch FETs is presented and compared to a production GaAs pHEMT technology. Data from prototype high-resistivity SOI RF switch designs is presented and compared to pHEMT based designs.
We describe a 0.18/0.5 um RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 kOhm-cm) substrates. A high performance/high power RF MEMS contact switch can also be integrated in the technology through above-IC post-processing. This RFCMOS/MEMS integrated technology provides a platform for cost-effective monolithic integration of several RF RX/TX functions for next generation...
A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz. A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more...
We describe the development of a novel RF CMOS thick silicon-on-insulator (SOI) technology built on high resistivity (1 kOmega-cm) silicon substrates. This technology provides a platform for cost-effective monolithic integration of several RF RF TX functions for cellular and WLAN RF system applications. The technology includes the integration of an RF power LDMOS transistor capable of nearly comparable...
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