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Germanium dots have been grown on high twist angle (twist angle as high as 20°) molecular bonded silicon (001) substrates. We show that, depending on the thickness of the silicon film, the strain field generated by an ordered array of mixed edge interfacial tilt (miss-cut) dislocations may induce an ordered growth of germanium dots. We also show that in order to observe an influence of the mixed edge...
Highly ordered germanium nanostructures are grown by molecular beam epitaxy (MBE) on molecularly bonded silicon (001) substrates. For high twist-angle-bonded substrates (twist angle as high as 20°), a one-dimensional organization of growth is induced by an interfacial network of mixed tilt dislocations. Depending on growth conditions, we were able to achieve an organized growth of germanium dots,...
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