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The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control. This approach is especially important for the epitaxial deposition of very thin (nm) layers. Here, the existences of Ge oxide in the CVD reactor resulting from former Ge deposition and hydrogen termination of the wafer surface is impacting the epitaxial growth essentially...
Influence of implanted monomer nitrogen (14N) on the diffusion of single delta-doped phosphorus (P) layer in epitaxial Ge (001) and its electrical activation by rapid thermal processing (RTP) is investigated. One µm thick intrinsic Ge with a P delta layer at 25nm from the surface with / without 14N co-implantation is annealed at peak temperature of 450°C to 800°C for 10s. The high P concentration...
P atomic layer doping (P-ALD) of Ge is investigated at temperatures between 100ºC and 300ºC using a single wafer reduced pressure CVD system. Hydrogen-terminated and hydrogen-free Ge (100) surface are exposed to PH3 followed by Ge deposition at 300oC. P adsorption is suppressed by hydrogen-termination of Ge surface. On hydrogen-free Ge surface, incorporated P dose is increased with increasing PH3...
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