The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report new insight into the high-frequency operation potential of the tunnel emitter transistor, based on device measurements and on a detailed device model accurately predicting device behaviour. Using our model in combination with a simple hybrid-π equivalent circuit we estimate the scaling properties of the unity-gain cutoff frequency (f T ). We suggest device configurations which should...
Tunnel emitter transistors (TETs) are promising devices for high-current-density, high-frequency applications. The excellent CMOS compatibility of the TET makes it an ideal candidate to replace the bipolar junction transistors in BiCMOS technology; however, many properties of the TET are still under investigation. In this paper we present TETs with the highest current gain ever reported, 500-800....
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.