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The limiting performance and reliability of metal-oxide-semiconductor (MOS) devices is determined by intrinsic bonding defects. These are primarily O-atom vacancies. A universal model, developed initially for (i) nano-crystalline transition metal (TM) Oxides is extended to O-vacancies in (i) non-crystalline SiO2 and Si oxynitride alloys. Differences between electron injection into, and trapping ay...
It is generally accepted that dielectric ageing, prebreakdown and breakdown in solid dielectrics are initiated at points of high local field (1). The damage process depends very much on the way the system reacts to the local field enhancement. To make this point clear we discuss a simple example. We consider a simple needle-plate geometry. We furthermore assume that the current density versus local...
Space charges are known to play a very important role in dielectric ageing. The difference between impulse and dc electric strength, the influence of prestressing and impulse rise time on breakdown voltages and the polarity dependence of the breakdown voltage in the needle plate geometry all have been explained by space charge build up (1). In addition, the action of highly energetic charge carriers...
A dielectric submitted to a prolonged electrical stress will fail at nominal field levels often one or two orders of magnitude below the short term breakdown field. The damage typically consists of multiply branched hollow channels of ∼ µm diameter (electrical trees) which originate at a point of local field enhancement. Another family of damage structures consists of channels much finer in diameter...
A new technique for directly measuring the energy and momentum loss rates of hot electrons as a function of their kinetic energy E in dielectrics is presented. The relation between the dielectric breakdown on one side, the momentum scattering rate γp(E) and the LO phonon emission rate γuLO(E) of hot electrons on the other side is essential and direct and can be seen through the expression equation...
Dielectric ageing always starts at points of strong local field enhancement, such as sharp metallic points, inclusions and the like. In a separate contribution to these proceedings it is argued that the formation and growth of an electrical tree is governed by a balance between the electrostatic forces on the charges at points of local field enhancement and the local mechanical strength of the material...
Most models of intrinsic dielectric breakdown are based on a “hot” electron mechanism such as avalanche formations by impact ionization. Surprisingly no direct experimental information about the processes which control hot electron properties in polymeric dielectrics is available. As an example, polyethylene (PE) is considered. PE has a band gap of the order of 10 eV and a breakdown field of the order...
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