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Among the new memory concepts proposed in the last decade to replace the conventional flash cell, nanocrystal memories received large attentions because of their simple and CMOS compatible process flow. Using a 3-dimensional Monte Carlo simulator, we investigated the scaling perspectives of the nanocrystal memory technology due to reliability constraints. Results show that scaling this technology...
We performed 2D quantum-mechanical simulations of double-gate devices with drift-diffusion and ballistic transport models, investigating the performance improvement that may derive from a scattering-free transport. Device performance and trade-offs are analyzed for channel length from 30 to 8 nm
We present results of 3D Monte Carlo simulation of nanocrystal memory cells, investigating the impact of edge and percolation effects on the achievable threshold voltage window. While edge effects reduce the performance for narrow cells, percolation can play a beneficial role for W scaling, but is critical when scaling L. To reduce edge effects, a structure with non-overlapped trenches is proposed...
We performed 3D Monte Carlo simulations of SOI NAND nanocrystal memories investigating the scaling constraints due to both program failure and reliability concerns. We show that the NC density should be optimized as a trade-off between number fluctuation and SILC immunity and that proper optimization is needed in order to meet the 45 nm ITRS node requirements
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