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A nonvolatile field-programmable gate array (NVFPGA), where both magnetic tunnel junction (MTJ) devices and greedy power-saving techniques are utilized, is proposed. Because the circuit components are shared among several MTJ devices by the use of logic-in-memory (LIM) structure, the number of leakage current paths is reduced, which results in leakage power reduction during power-on. Moreover, the...
A compact lookup table (LUT) circuit using spin transfer-torque magnetic tunnel junction (STT-MTJ) devices combined with MOS transistors is proposed for a standby-power-free field-programmable gate array (FPGA). Since STT-MTJ devices essentially have an asymmetric characteristic in switching currents, one of two write-control transistors can be implemented with a small feature size, while the width...
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