A nonvolatile field-programmable gate array (NVFPGA), where both magnetic tunnel junction (MTJ) devices and greedy power-saving techniques are utilized, is proposed. Because the circuit components are shared among several MTJ devices by the use of logic-in-memory (LIM) structure, the number of leakage current paths is reduced, which results in leakage power reduction during power-on. Moreover, the use of the self-termination scheme, which automatically turns off the write current immediately after the desired data is written, makes it possible to minimize power consumption during the backup operation. In fact, the proposed NVFPGA exhibits a 90 % power reduction in comparison with that of a conventional SRAM-based FPGA under typical benchmark-circuit implementations.