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A 45 nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite-channel high electron-mobility transistor (mHEMT) on GaAs substrate with good DC and RF performance has been developed. The structure was grown by molecular beam epitaxy and exhibits a superior electron mobility of 10200 cm2/(V.s) and a sheet density of 3.5 × 1012 cm−2 at a room temperature. A combined optical and e-beam lithography...
An AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) on Si substrate was obtained with 18 nm silicon nitride (Si3N4) grown by low-pressure chemical vapour deposition (LPCVD) as the gate insulator. The D-mode MIS-HEMT shows a high Idss of 16.8 A at Vg = 3 V, a high breakdown voltage (BV) of 600 V and a low-specific on-resistance of 2.3 mΩ·cm2. The power device figure...
We demonstrated a viable technology for GaN-based integrated microsensors using the suspended GaN microstructures fabricated with GaN on patterned silicon technique. Fundamental characteristics of the GPS technique are investigated. Active devices (HEMT) were fabricated on the AlGaN/GaN cantilevers and qualitatively tested. The experiment shows that the HEMTs on cantilevers can effectively sense the...
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