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The thermal distribution of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with sizes close to the nanoregime is analyzed by means of a fluorescent nanothermographic imaging technique based on the heat-induced fluorescence feature of polydiacetylene (PDA) supramolecules. The direct detection of nanoscale hot spots generated by hot carriers in poly-Si TFTs is demonstrated with sufficient...
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