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Time-resolved photoluminescence spectroscopy of InGaAs strained quantum dot prepared by ultrahigh-rate MBE growth indicated a small distribution of ground states energies and carrier lifetime as long as 0.9 ns at 77 K.
We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113 K.
A 4-THz injection-seeding bandwidth (1042 -1057 nm) was successfully demonstrated with a 1-mum optical-waveband quantum-dot (QD) Fabry-Perot laser-diode. A Sb-molecule-sprayed InGaAs/GaAs QD structure in its active-medium was grown by molecular-beam-epitaxy with a GaAs-substrate.
O-band quantum-dot(QD) laser-diode(LD) has been successfully demonstrated with novel InAs dot-in-well structures employed on GaAs-wafers. Improvement of crystal-qualities and enhancement of electroluminescence-intensities have been brought about to the LD-devices by Sb-molecule around InAs-QDs during molecular-beam-epitaxy.
Metamorphic InGaAs/AlAsSb multiple quantum wells (M-MQWs) were grown on GaAs. The M-MQWs were evaluated by X-ray diffraction, photoluminescence and polarity dependent optical absorption measurements. These measurements revealed that M-MQWs had good structural and optical qualities. M-MQWs with high sheet carrier densities (ges 1012/cm2) clearly showed absorptions in TM polarized light corresponding...
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