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We investigated the temperature dependence of dark current, avalanche gain and breakdown voltage in Al0.85Ga0.15As0.56Sb0.44 (hereafter AlGaAsSb) avalanche photodiodes (APDs) with avalanche region widths, w = 90 and 178 nm. There is negligible band to band tunnelling currents and a very weak temperature dependence of gain observed in both didoes. The temperature coefficient of breakdown voltage, C...
This paper investigated the temperature effect on the electrical properties of an In0.5Ga0.5As/GaAs QD solar cell, leading to a better understanding of the basic cell characteristics influenced by QD incorporation which is of great importance for future design of high efficiency QD solar cells.
In this work, we present the study on Separate Absorption, Charge and Multiplication (SACM) APDs utilising In0.52Al0.48As as the multiplication layer and In0.53Ga0.47As/GaAs0.51Sb0.49 periodic heterostructures as the absorption layer. In0.52Al0.48As lattice matched to InP has been shown to have superior excess noise characteristics and multiplication with relatively low temperature dependence compared...
Development of linear temperature dependent small-signal models for active devices is useful for circuit designers to predict the circuit performance incorporating the devices. It is especially the case for high power devices where tremendous heat is expected to be generated and the underlying physics of the device could be affected. This paper presents, for the first time, an automated direct equivalent...
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