The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A procedure to determine the diffusion coefficients of metallic impurities in p-type semiconductors is presented. This method, which rests on the analysis of the capacitance transient curve C(t) at various temperatures has been applied to the study of copper and silver diffusion in p-type Hg0.3Cd0.7Te and CdTe crystals. The as-found diffusion coefficients are in good agreement with existing results...