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The power MOSFET on 4H-SiC is an attractive high-speed and low-dissipation power switching device. The problem to be solved before realizing the 4H-SiC power MOSFET with low on-resistance is low channel mobility at the SiO2/SiC interface. This work has succeeded in increasing the channel mobility in the buried channel IEMOSFET on carbon-face substrate, and has achieved an extremely low on-resistance...
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