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The conduction mechanisms of dielectric breakdown (BD) in MOS capacitor structure with nanocrystals (NCs) embedded in bi-layer gate stacks (SiO2/Al2O3) are studied systematically. Using a unique stressing methodology of inducing a BD path in one dielectric layer, the charging and discharging phenomenon of the metal NCs and leakage mechanism in the degraded gate stacks are found to be strongly dependent...
Tri-level resistive switching behavior was observed in an Al2 O3/SiO2 gate stack with Ru metal nanocrystals embedded in the Al2O3 layer. The device was successfully switched among three resistance states (high, medium, and low) after a forming process using a simple electrical method. The resistance ratio of the high-resistance state to the low-resistance state is more than 103. The insulator-to-conductor...
Phenolic resin laminate (PL) was employed to investigate the effect of magnetic field on migration rate of surface carbonization which is the primary reason for surface dielectric breakdown. A needle-plate electrode system was used and the distance between the electrodes was 4 mm. Experiments were carried out under dc pulse voltage with a frequency rang from 50 Hz to 100 Hz. The magnetic flux density...
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