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The effects of 100 keV Cu ion implantation and subsequent annealing (i.e. common annealing or rapid annealing) at 500 °C on modifying the surface morphology and the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were investigated. A Common annealing provides moderate enhancement in both electrical and EFE properties. Besides, the rapid annealing results in a...
Transformation of PSTN to NGN is a challenging goal for many legacy telecom operators. A smooth migration for PSTN will be an evolutionary process. It is expected that a new generation PSTN can extend the range of new services. Chunghwa Telecom is currently initiating an NGN_CN development which is part of NGN project for PSTN migration. In this paper, the key network technologies for PSTN migration...
SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH 3 ) 4 ) diluted in H 2 as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion...
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