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We have investigated the epitaxial growth of (111)ZrN films on (111)Si substrate at a relatively low temperature using an ultrahigh vacuum DC magnetron sputtering system. The film quality obtained and the epitaxial relationship were evaluated on the basis of analyses of X-ray diffraction (XRD) patterns, X-ray pole figures, and grazing incidence angle X-ray reflectivity (GIXR), transmission electron...
TiN thin films are prepared by sputtering method using Ti and TiN targets to compare their properties. Stoichiometric TiN films are obtained using both Ti and TiN targets, and the lowest values of resistivity for them are found to be 30.8 μΩ cm and 45.6 μΩ cm, respectively. In the change of film resistivity with N 2 flow ratio, a remarkable difference is seen between two cases and the reason...
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