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In this letter we propose a method for the fabrication of suspended strained silicon nanowires. Tensile uniaxially strained silicon is obtained by elastic strain relaxation of patterned tensile biaxially strained silicon on insulator layer. Electron beam lithography, reactive ion etching and oxidation are employed to write and transfer the nanowires down to a dimension of 15 nm in diameter. Surface...
We have investigated strain relaxation of patterned SiGe lines after He implantation and annealing. Asymmetric relaxation of the SiGe lines transforms biaxial stress into nearly uniaxial stress for very narrow lines. The effect of the anisotropic stress on the carrier mobility of strained silicon on top of the SiGe lines will be discussed in the frame of the piezoelectric resistivity model as presented...
We investigate the strain state in patterned SiGe lines of various widths after strain relaxation by He ion implantation and annealing (Hollander et al, 2001). We expected that the relaxation in such patterned virtual substrates must be more pronounced in one direction of the stripe than the other, thereby opening a possibility for further enhancement of hole mobility. We employed high-resolution...
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