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The nitridation of InAs, InP, and InSb by low-energy N 2+ ion bombardment at different preparation parameters was studied by near-edge X-ray absorption fine structure, photoemission spectroscopy (PES), and resonant PES measurements. The investigated surface nitride layers mainly consist of compounds with In-N, V-N bonds and interstitial nitrogen (N i ). The final remaining nitride...
The effect of low-energy N 2+ ion beam bombardment on InAs, InP, and InSb surfaces has been studied using in situ X-ray photoelectron spectroscopy. The formation of a nitrided surface layer has been observed for all investigated AIII-BV semiconductors. Beside the emerging In N bonds also P N bonds were detected for InP, whereas for InAs and InSb, there is no evidence for the formation...
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