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The static noise margin (SNM) as well as Vth, gm, body factor, and drain-induced-barrier-lowering (DIBL) in individual transistors in SRAM cells are directly measured by 16k bit device-matrix-array (DMA) SRAM TEG. It is found that, besides Vth variability, DIBL variability degrades SRAM stability and its Vdd dependence while the variability of gm and body factor has only a small effect.
A special device-matrix-array (DMA) TEG of 16k bit SRAM cells has been designed. Static noise margins (SNM) and 6 transistors in cells are directly measured and their fluctuations are examined. It is found for the first time that one-side SNM follows the normal distribution up to ±4σ. It is also found that the cell stability is worse than circuit simulation using Vth of measured 6 transistors. Furthermore,...
The concept of the post-fabrication self-convergence scheme is applied to improve the SRAM stability. It is shown by measurement-based simulation that static noise margin (SNM) of SRAM are self-improved by selective non-volatile Vth shift of transistor in each cell.
A new concept for suppressing variability in SRAM cells and logic transistors is proposed. The novel method utilizes self-convergence mechanisms: Vth of transistors with low Vth is selectively raised by applying high bias voltage to all transistors collectively after chip fabrication, resulting in lower variability in retention-noise-margin (RetNM) in SRAM and Vth in logic transistors. The concept...
In our previous paper, we proposed a new classification technique called the Frequency Ratio Accumulation Method (FRAM). This is a simple technique that adds up the ratios of term frequency among categories. However, in FRAM, the use of feature terms is unlimited. In the present paper, we adopt character N-gram as feature terms improving the above-described particularity of FRAM. That is to say, the...
Work function (WF) control is a key technology for the reduction of channel impurity concentration, which results in the decrease in intrinsic random dopant variation (IRDV). It is demonstrated that saturation Vth is affected not only by IRDV but also by S factor variation owing to fluctuation of DIBL. While channel impurity reduction by WF control decreases IRDV, DIBL is degraded in turn, and this...
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