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Thin Ti films deposited onto thermal SiO 2 by sputtering in Ar or Ne are analyzed accounting for electron scattering at both film and grain boundary surfaces. An intrinsic resistivity of 54 and 63 μΩ cm, and an electron mean free path of 18 and 15 nm is derived for films sputter deposited in Ar and Ne, respectively. For both gases, a grain boundary reflection coefficient of 0.17 is calculated,...