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Miniaturization of microelectronic devices has reached a fundamental scaling limit; parasitic electron tunneling through the ultrathin gate dielectric has become a major obstacle to continued device performance. One method for overcoming this limitation is to replace SiO2 gate dielectrics with thicker high-κ metal oxides. La2O3 and ZrO2 are two such materials that have received significant interest,...
The effects of precursor solution concentration, composition, and spin-processing parameters on the thickness and electrical properties of ultra-smooth aluminum oxide phosphate (Al2O3−3x(PO4)2x or “AlPO”) thin films prepared using aqueous solutions are reported. Compositions were verified by electron probe micro-analysis and range from Al2O1.5(PO4) to AlPO4 (x = P:Al from 0.5 to 1.0). Film thicknesses...
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