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In this work, mass spectrometry and optical emission spectroscopy techniques were used to monitor the molecular and atomic neutral species during SF 6 /CF 4 , SF 6 /O 2 and CF 4 /O 2 plasmas generated in a radio-frequency Hollow Cathode Reactive Ion Etching (HCRIE) reactor keeping constant the following operational conditions: total gas flow rate, gas...
In this work is proposed the automation of a gas injection (mass flow) system in order to generate timemultiplex SF6/CH4 radiofrequency plasma applied for silicon (Si) etching process. The control of the gas injection system is important in order to better control the process anisotropy, i.e., the high‐aspect‐ratio of mask pattern transfer to substrate surface. In other words, this control allows...
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