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Broad bandwidth, low-reflectance, low-cost antireflection (AR) layers on GaAs are demonstrated using a quarter-wave optical thickness dielectric grown by directly oxidising the GaAs through a carefully-balanced oxygen-enhanced wet thermal process at 420°C. For centre design wavelengths between 550 and 800 nm, the native oxide AR layers have a simulated and measured reflectance minima as low as 1.0%,...
We report a novel approach to enable the fabrication of dielectric isolated FinFETs on bulk substrates by bottom oxidation through STI (BOTS). BOTS FinFET transistors are manufactured with 42nm fin pitch and 80nm contacted gate pitch. Competitive device performances are achieved with effective drive currents of Ieff (N/P) = 621/453 µA/µm at Ioff = 10 nA/µm at VDD = 0.8 V. The BOTS process results...
In order to maximize Cu volume and reduce via resistance, barrier thickness reduction is a strong option. Alternative barriers for next-generation BEOL were evaluated in terms of barrier performance to O2 and Cu diffusion, and effects on reliability. A clear correlation of O2 barrier performance to electromigration was observed, suggesting that the key role of the barrier layer is to prevent oxidation...
Ethanol vapor sensors utilizing functionalized carbon nanotubes as sensing elements have been successfully built. The Au microelectrodes on the silicon substrate were fabricated by MEMS technology and the carbon nanotubes connection was achieved by DEP manipulation. Chemical oxidation method was used to graft functional groups such as COOH and OH on multi-walled nanotubes (MWNTs). Sensor performance...
Biofuel cells are considered the most promising future energy source. This paper presents a bio-energy generation system based on the micro-fluidic platform which utilized enzymes as catalysts and glucose as a fuel to process the electrobiochemical energy conversion and storage in a cell. This is known as the enzymatic bio-fuel cell (EBFC). It is designed to consist of two modified gold electrodes...
It's difficult to measure junction depth because the junction is not in horizontal direction in textured silicon solar cells. In this paper a new, accurate junction depth measurement technique for textured silicon solar cells is investigated. Both experience and experimental data indicate that the measurement technique we used is feasible.
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