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The effective masses of hole and electron in the inversion layers have been quantitatively characterized for Ge p- and n-MOSFETs, for the first time, with Shubnikov-de Haas (SdH) oscillations measurements at ultra low temperatures. It was found that the effective mass clearly increased with a larger Ns for both hole and electron in (100)/(110)/(111) Ge p and n-MOSFETs. The effectiveness and necessity...
This paper reports a high-temperature, wide gain-bandwidth SOI-CMOS transimpedance (Rm) amplifier that is well suited for application to MEMS-based impedance sensors. The amplifier was fabricated using a fully depleted 0.5-μm technology and achieves a gain-bandwidth of 8 MΩ by 1.2 MHz at room temperature while drawing 0.66 mW from a 3.3-V supply. Gain and bandwidth remain above 2 MΩ and 0.3 MHz, respectively,...
We report a novel refractive index sensor using mechanical pressure induced long period gratings in photonic crystal fiber. Sensitivity of ~10-6 was achieved for the measurand in the holey channels..
Experimental electrical property data on silicon grain boundaries (GBs) are reported on a unique sample set consisting of direct silicon bonded (110)/(100) hybrid orientation wafers using C-V, I-V, and MOS capacitance transient techniques. For the relatively clean interfacial bonded GB, the density of GB states NT is on the order of 1012 eV-1cm-2, and the charge neutral level is at ~0.53 eV from the...
The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated...
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