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A novel silicon-on-insulator (SOI)-based tunnel FET (TFET) with two source regions (TSRs) is proposed and investigated by Sentaurus simulation. The incorporation of the TSR in the SOI platform augmented the effective tunneling area between source–channel junctions and hence boosts the drive current of the device. To restrain the leakage current at a lower value, we have introduced an isolator oxide...
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