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Heteroepitaxial, or metamorphic, growth enables us to overcome limitations on the performance of semiconductor devices caused by the lattice-matching restriction. We have demonstrated high-crystalline-quality metamorphic grown InGaAs and GaAs/Ge layers on GaAs and Si substrates, respectively. The InGaAs layer on GaAs allows us to make laser diodes operating at 25 Gbit/s with high characteristic temperature...
We demonstrated a 1.3-μm-range laser with a high characteristic temperature = 220 K) and the highest operating temperature (200 °C) ever reported for a metamorphic laser. The temperature characteristics were greatly improved by inserting a p-InGaAlAs electron stopper layer. In addition, we realized a high value with a low injection current using a short cavity ( = 200 μm) laser operating...
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