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GaAs-based Blocked-Impurity-Band (BIB) detector, as a potential high-sensitive, low noise Terahertz (THz) detector, has been developed for the broad application in the area of THz security check and astronomy mission. In this work, GaAs:Si and GaAs:Te BIB detectors were fabricated. Their responsivity properties were measured at T=3.5K, under different biases and the same black body temperature of...
We have developed a GaAs-based Blocked-Impurity-Band (BIB) Detector for the application of Terahertz (THz) security check and astronomical observation. In this work, we have fabricated GaAs:Si and GaAs:Te BIB detectors and analyzed their spectral response characteristics at 3.5K The experimental results of GaAs:Si BIB device demonstrate that the spectral response increases when the bias rises from...
GaN MOSHEMT or MOSFET on top of conducting (drift layer and drain electrode) layers is a building block for vertical GaN VDMOS power transistors. GaN MOSHEMTs incorporating a polarization-doped p-AlGaN layer as the back barrier on top of conducting layers is named as PolarMOSH. In this work, we present a comparative study of PolarMOSH fabricated on SiC and free-standing GaN substrates. PolarMOSH wafers...
In order to optimize the turn-on characteristics of the SiC reversely switched dynistor (RSD), by the orthogonal experimental design method, the optimum structural parameters for the voltage rate of 4kV are proposed in this paper, with full consideration of the influences of the several key parameters of SiC RSD. The influences of the single factors that contain the main structural parameters of the...
A conventional approach of doping to control the bistable resistance switching in was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current...
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