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For comparing the stability and reliability of horizontal, vertical and flip LED chips, we carried on the high temperature and high current aging experiment towards to the three kinds of bare LED chips on our self-build online monitoring and accelerated life system. Most of samples shown stable performance during the entire experiment process, but there was only one flip LED chip whose illuminant,...
Due to resolving the key escrow problem and public key authentication problem, certificateless public key cryptography has drawn many attentions from numerous scholars and experts in recent years and becomes a hotspot for cryptography research. Most recently, the scholars of He and Du proposed a forward secure certificateless proxy blind signature scheme. Through the security analysis on the forward...
High crystal quality ultrathin Ge and Ge0.96Sn0.04 channels are epitaxially grown on SOI and Si bulk, respectively, and high mobility pMOSFETs are fabricated. Low-temperature Si2H6 passivation of Ge and GeSn is utilized to form a high quality SiO2/Si interfacial layer between the high-κ dielectric and channels, leading to a substantial reduction of Dit. Ge and GeSn pMOSFETs achieve the improved μeff...
As known to all, photometric and colorimetric quality of LED illumination mainly depends on LED chip, phosphor and sealant. The investigation on failure mechanism of the three parts carries critical meanings for improving reliability of LED production. This paper mainly focus on reliability and failure mechanism of the three kinds of phosphor and three kinds of sealant which are wildly used in high...
Certificateless cryptography avoids the key escrow problem in identity-based crytosystems and certificate management in traditional public-key crytosystems, it has been researched by many scholars and many certificateless signature schemes have been proposed. However, most of them exist some security drawbacks and are insecure for some kinds of attacks. In this paper, we analyze two certificateless...
Gain medium is introduced into the nanodisk resonator to enable loss-negligible surface plasmon polaritons propagation in near-infrared wavelengths, which benefits the applications of switches and lasers based on SPPs in the planar optoelectronic densely integration.
We demonstrate high performance undoped Ge0.92Sn0.08 quantum well (QW) pMOSFETs with in situ Si2H6 passivation on (001), (011) and (111) orientations. (011) and (111)-oriented Ge0.92Sn0.08 QW pFETs achieve higher on-state current ION and effective hole mobility μeff compared to (001) devices. Ge0.92Sn0.08 (111) QW pFETs demonstrate a record high μeff of 845 cm2V−1s−1 for GeSn p-channel devices (Fig...
Presented is a piezoresistive absolute micro-pressure sensor, which features relatively high sensitivity and overload resistance simultaneously. In this investigation, the design, fabrication and testing of the sensor are carried out. By analyzing the stress distribution on sensitive elements using the finite-element method (FEM), an improved structure through introduction of sensitive beams and islands...
Ancient Chinese tablets are invaluable in terms of historical and aesthetic value. Automatic character segmentation of images from degraded tablets poses a challenging problem. Therefore, this paper proposes a new character segmentation method that utilizes an enhanced stroke filter and an energy propagation process based on local layout information. A ground-truth dataset was established to evaluate...
A low cost etching method, metal-assisted chemical etching (MaCE), was used to successfully etching 30 μm-diameter silicon vias (SVs), of which the quality are comparable to those fabricated by deep reactive ion etching (DRIE) method. A novel carbon nanomaterial filling method was developed based on chemical vapor deposition (CVD) technique. The influence of preparation of CVD catalyst on the quality...
Si surface modification is of great significance for a variety of applications, such as hydrophobic treatment, surface passivation of photovoltaic devices, and microelectronic devices. In this study, a facile way of forming superhydrophobic surfaces is reported that uses KOH etching and Au assisted HF/H2O2 etching of silicon wafers. The Au layer was deposited onto a pyramidal silicon wafer via e-beam...
In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it...
We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6times6 kldrp model. We take into account the inhomogeneous strain effects induced by the lattice mismatches between germanium and silicon. We find that the top subband ends drift back to Gamma point, and the effective masses of more subbands begin to decrease when the shell thickness...
In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that Ids and Vth calculated by 2D current model achieve a better accuracy than Surf model.
Recently a novel device structure called dopant-segregated Schottky barrier MOSFETs (DSS SBTs) has been proposed where the Schottky barrier height can be significantly reduced thus achieving much larger drain currents. Although quite a few experimental studies have been performed on this structure, further investigation on the carrier transport mechanism is required for the optimization of device...
We have modeled and calculated the band structure of Ge-Si core-shell nanowire, with both subband interactions between Ge core and Si shell and the inhomogeneous strain effects taken into account. Our results show that the effective masses of subbands, the densities of states and quantum conductance will undergo significant changes and converge to saturated values, as the Si shell turns thicker and...
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