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Surface defects on two types HD SIMOX wafers that made of CZ wafers and epitaxial wafers as starting materials were examined for their shape and density. It was found that surface defects on HD SIMOX wafers were mainly classified into two categories. One was ''pit-type'' and another was ''undulation-type''. It is considered that the former defects are originated from grown-in defects, such as COPs,...
Summary The crystal structure of silicon has been examined by means of X-ray diffraction according to the Pendellösung method. Measurements of the fringe pattern were made for the 111, 220, 113, 004, 331, 224 and 333 diffractions in a temperature range 17–300 K. It is found that the value of the Debye temperature determined from the temperature dependence of the period of Pendellösung fringes is in...
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