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The di-vacancy is known to introduce three energy levels in the energy-band gap of Si. Using deep level transient spectroscopy (DLTS) on particle-irradiated p + n and n + p diodes, we have followed these levels in epitaxially grown, strain-relaxed Si 1-x Ge x as a function of x for 0=<x=<0.5. Both the single- and double-acceptor levels located in the...