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Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (a) circular mesa diodes with silver-plated (integrated) heat sinks; (b) pill-type diodes bonded to diamond heat sinks. Both configurations utilised a miniature quartz-ring package. Output power greater than 1 W CW was achieved...
A lumped-element TRAPATT-diode oscillator capable of more than 0.5 kW output power from a single diode chip is described. Peak power of 575 W with 23% efficiency and a maximum efficiency of 28% at 0.5 kW output power have been consistently obtained at approximately 1 GHz.
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