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We report on high-frequency performance and temperature stability of zero-bias GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection in 220–330-GHz band. The average voltage sensitivity of 1400 V/W has been achieved in $0.8\times 0.8~\mu $ $\mathrm{m}^{2^{^{^{}}}}$ mesa devices at room temperature. Measured current–voltage characteristics revealed a superior temperature stability of...
This presentation describes on-wafer characterization of GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection in 220–330GHz band. Voltage sensitivity above 1000V/W was measured in 0.8μm×0.8μm mesa device at room temperature. The detectors demonstrated enhanced temperature stability of the characteristics compared to zero-bias Schottky barrier diodes. The estimated variations of the zero-bias sensitivity...
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