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We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0.5 source. The device shows good performance with an average subthreshold swing S of 80mV/dec over a drain current range of more than 3 orders of magnitude. We observed that an applied back-gate bias increases the on-current by a factor of 1.6, and improves the off-current...
In this work, we present the development of a Pt/graphene/SiC device for hydrogen gas sensing. A single layer of graphene was deposited on 6H-SiC via chemical vapor deposition. The presence of graphene C-C bonds was observed via X-ray photoelectron spectroscopy analysis. Current-voltage characteristics of the device were measured at the presence of hydrogen at different temperatures, from 25°C to...
A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C.
In polyimide films, there occur breaks in the reciprocal-temperature dependence of the log-electrical conductivities. It indicates that the multiple transitions and relaxations of the polyimide films are reflected in the above mentioned relationship. This presents us the possibility to determine the rule of variations of the electrical conductivities of the polymer with temperatures and is of interest...
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