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In this paper, we present a 50V GaN HEMT technology portfolio and focuses on layout optimization, fabrication, and device modeling. A 100W PA has been demonstrated with custom heat-sink and second harmonic tuning. The newly developed 50V technology enables high power amplifier, pulsed radar, CATV, and LTE applications utilizing supply voltages of 50V for L- to C- band operational frequencies. Our...
This paper presents the development of a newly available GaN HEMT technology portfolio and focuses on fabrication, RF characterization, reliability performance and device modeling. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests. The GaN HEMT technologies enable power amplifier, low-noise amplifier, and...
This paper presents the development of a newly available short gate length 0.25μm GaN HEMT technology and focuses on fabrication, process control, RF characterization and DC reliability. Our pure play Foundry services support discrete and RF applications with detailed specifications and wafer acceptance tests. The analysis of load-pull measurements of S- through X-band and DC reliability allow designers...
This paper discusses a newly developed 0.25μm GaN on SiC foundry process technology to support discrete and MMIC applications extending from L-through X-band. The GaN HEMT technology is based on high-throughput and low-cost i-line photolithographic tools and on large-diameter 100mm SiC substrates. The technology supports applications utilizing supply voltages up to 28V with power density of 4W/mm,...
The electrical, optical, structural, chemical, and etch properties of r.f. magnetron, sputter-deposited thin films of indium–tin–oxide (ITO) and cadmium–tin–oxide (CTO) are presented. Polycrystalline thin films of CTO and ITO with distinct diffraction peaks corresponding to the (220), (222), and (400) crystal planes and with an overall preferential 〈111〉 orientation were obtained at elevated deposition...
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