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Grating coupler based on 220 nm Si-on-insulator (SOI) substrate was designed and optimized for operation at 2 μm wavelength targeting telecommunication application. Decent coupling efficiency of around 18% is achieved, which is consistent with the simulation results and can be employed in 2 μτη-based photonic integrated circuit.
Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with...
Zinc oxide (ZnO) thin film piezoelectric cantilevers were fabricated and characterized in this work The ZnO film was deposited by RF magnetron sputtering system under optimized deposition parameters at room temperature. The XRD pattern of the ZnO film showed that it has a highly preferred c-axis orientation. The cross-sectional FE-SEM picture of the ZnO film indicates that the columnar growth of ZnO...
We report the first 1700 pixels per inch (PPI) passive-matrix blue light-emitting diodes on silicon (LEDoS) micro-displays. By flip-chip bonding a micro-LED array onto an ASIC display driver, we successfully fabricated a 0.19-inch display with a resolution of 256 x 192, the highest ever reported in LED-based micro-display. In addition, the LEDoS micro-display can deliver brightness as high as 1300...
This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the...
With the trend of commercialization of through-silicon vias (TSVs) in 3D integrated microsystems, new TSVs filling processes are developed to meet the requirement of low-cost fabricating of high-electrical performance and high-thermal reliability TSVs without any voids. In this paper, Sn-based IMCs are used as the filling materials for the formation of conductive path of TSVs. The Sn-based IMCs filling...
Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using an As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125°C.
Higher education tuition must take account of the quality of cultivation and the economic endurance of ordinary family. This requires a reasonable standard of higher education tuition to ensure the healthy and continual development of higher education. This paper focuses on four factors such as the social benefit from higher education, the cultivation quality of universities, the economic endurance...
A fault tolerant control method is proposed for two sequentially connected continuous subsystems. This mimics the simplest case for sequentially arranged multi-agent systems that are seen in many process industries. The first subsystem is an ordinary linear system and the second is a stochastic distribution system. The proposed fault tolerant control aims at obtaining a control strategy that can use...
From the available mass production devices of HFCBGAs, there can be a range of surface roughness with different surface finished of silicon dies and heat spreader. An aluminum filled gel is used to examine the surfaces clamping with both identical substrates at both sides whether compatible to the thermal conduction. Their thermal contact resistances are measured by laser flash technology and therefore...
This paper introduces the circuit and working principle of the infrared isolation effectiveness of car windows film tester. The circuit of the tester was constituted mainly by frequency modulating infrared light source, silicon photovoltaic cells, I/V convertor, A/D convertor and so on. The infrared wavelength range of the infrared light source is broader than the single infrared LED testing, which...
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