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Based on the test structures and silicon measurement data done at 40nm technology, we analyze the impact of varying length between the contacted active-area and gate (S) on the performance of NMOS dogbone devices, such as saturation drain current (Idsat), threshold voltage (Vth), and leakage current (Ioff). The experiments show that as the length between the contacted active area and gate (S) is increased...
Recently, silver paste, silver epoxy, and solders were commonly used as die-attach materials for power electronic packaging. Thermal performance of these materials should be paid attention to since reliability of sintered or soldered jointsis highly dependent on the thermal performance. To accurately investigate the transient thermal behavior of sintered or soldered joints in electronic applications,...
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