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Using an ultra-fast switching measurement method, the mechanism of NBTI recovery in the first few seconds after stress termination is systematically studied. Results show: (1) A component of the fast |DeltaVt| recovery increases with stress temperature; (2) the amount of |DeltaVt| recovery is (i) independent of stress time under a negative gate recovery voltage, but (ii) increases with stress time...
A novel mobility model and its characterization technique were presented for manufacturing strained-Si NMOSFETs. The mobility terms in Matthiessen's form can be precisely decoupled to investigate Coulomb scattering effect for different stress conditions. Stress devices suffered serious Coulomb scattering at high vertical field, however, tensile stress NMOSFET exhibits better mobility enhancement than...
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