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We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 ??m-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The dependence of etching depth on etching time for the implantation at different ion fluences was investigated. Erosion of GaN surface was obvious with implantation at the fluence of 3??1016 cm-2. The experiment...
The leakage current mechanism in Schottky contacts (SCs) to Al0.25Ga0.75N/GaN heterostructures incorporated by thin high-temperature (HT) AlN interlayer has been investigated using current-voltage measurements, atomic force microscopy, and deep level transient spectroscopy. The HT AlN interlayer thickness has a significant effect on the leakage current in SCs. The leakage current density is reduced...
200 nm thick InxAl1-xN epilayers around lattice-matched to GaN were grown on GaN templates by MOCVD. The elastic strain, surface morphology and crystalline quality of the InxAl1-xN were evaluated by high resolution X-ray diffraction (HRXRD) measurements, scanning electron microscopy (SEM) images and Rutherford backscattering spectroscopy (RBS) analyses. The strain effect, as while as the influences...
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