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A new high voltage power switch integrating the detection, amplification and validation of an optical drive guaranteeing a good galvanic insulation has been developed. This device integrates a MOS-gated thyristor, a photodiode, a Zener diode and a depletion mode MOSFET. Unlike conventional optothyristors, the photocurrent is not directly used to trigger the thyristor, but charges the MOS gate of...
In this paper PP - -type junction termination is investigated. Based on 2D simulations, we have optimized this termination in the 1200-1400 V range under non-punch-through (NPT) and in the 400-600 V range under punch-through (PT) conditions. We have analysed the influence of the doping and the length of the lowly-doped P - region on the efficiency of the termination and the influence...
A planar process for the fabrication of functionally integrated vertical high voltage switches is proposed. The process sequence and the results are presented for a light triggered thyristor with a MOS amplifying gate. This device consists in monolithic integration of a thyristor, a MOS transistor, a photodiode, a Zener diode and a depletion mode MOSFET. The high input impedance of the MOS gate allows...
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