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Last two decades have seen significant progress in developing III-nitride based laser didoes, in particular, InGaN-based blue laser diodes, which have been commercialised. However, there are a number of significant challenges in growth of longer emission wavelength such as green, yellow and even amber laser diodes. Recently, InGaN/GaN based green laser diodes with around 531 nm have been reported...
The fabrication and realization of single mode GaN-based nanowire lasers is presented, using a number of techniques, including geometry control, coupled nanowire pairs, placement onto a gold substrate, and distributed feedback.
We have demonstrated single-mode lasing in a single gallium nitride nanowire using distributed feedback by external coupling to a dielectric grating. By adjusting the nanowire grating alignment we achieved a mode suppression ratio of 17dB.
The polarization properties of GaN nanowire lasers are studied experimentally by analyzing their end-facet emission. We demonstrate that the polarization state varies for different transverse modes. Linear and elliptical polarizations are observed in our measurements.
We obtained single-mode lasing in GaN nanowires by using a limited number of cavity modes and a narrow gain spectra. The fabrication was achieved by a top-down technique in high quality GaN films.
We present a room-temperature 1.3-µm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302µm. The laser was operated in pulsed mode. The growth was enabled via the optimisation of the temperature of the initial nucleation layer of GaAs.
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