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NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones including smart phones, netbooks, and so on. This is because higher storage capacity and lower cost are realized through means of technology scaling every year. Emerging markets,...
We demonstrate here an oxide memory (OxiM) transistor as a new type of ferroelectric-gate field-effect transistor (FeFET), provided with a dual (top and bottom) channel, which can memorize channel conductance with a dynamic range exceeding 104. This new transistor consists entirely of the following oxide-based thin films: SrRuO3 (bottom gate electrode); Pb(Zr, Ti)O3 (ferroelectric); ZnO (semiconductor);...
NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improvements in feature size and area reduction are essential. To meet the stringent requirements, we develop a 16 Gb 4-level NAND flash memory in 43 nm CMOS...
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