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X-band power performance of N-polar GaN HEMTs is reported, including 2-tone results at 10GHz that demonstrate an OIP3/PDC linearity figure of merit of 12dB at a drain voltage of 20V, utilizing tuning of fundamental, second and third harmonic terminations. Compared to available linearity results of GaN HEMTs at 10GHz, the device technology presented here demonstrates the best such ratio reported at...
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